Patent Number: 7,089,525

Title: Semiconductor device and method for fabricating the same

Abstract: The number of design processes for fabricating semiconductor devices can be reduced by parallel connection of a plurality of unit bipolar transistors Qu that are completely electrically isolated from each other in a semiconductor layer of an SOI substrate 1 to form a bipolar transistor having a large current capacity.

Inventors: Tamaki; Yoichi (Kokubunji, JP), Iwasaki; Takayuki (Hitachi, JP), Tsuji; Kousuke (Saitama, JP), Kamada; Chiyoshi (Kokubunji, JP)

Assignee: Hitachi, Ltd.

International Classification: G06F 17/50 (20060101)

Expiration Date: 8/08/02018