Patent Number: 7,101,594

Title: Methods of forming capacitor constructions

Abstract: The invention includes a method of treating a predominantly inorganic dielectric material on a semiconductor wafer. A laser is utilized to generate activated oxygen species. Such activated oxygen species react with a component of the dielectric material to increase an oxygen content of the dielectric material. The invention also includes a method of forming a capacitor construction. A first capacitor electrode is formed to be supported by a semiconductor substrate. A dielectric material is formed over the first capacitor electrode. A precursor is provided at a location proximate the dielectric material, and a laser beam is focused at such location. The laser beam generates an activated oxygen species from the precursor. The activated oxygen species contacts the dielectric material. Subsequently, a second capacitor electrode is formed over the dielectric material.

Inventors: Sandhu; Gurtej S. (Boise, ID), Doan; Trung Tri (Boise, ID)

Assignee: Micron Technology, Inc.

International Classification: H01L 21/302 (20060101)

Expiration Date: 9/05/02018