Patent Number: 7,101,724

Title: Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation

Abstract: The present invention relates to MEM switches. More specifically, the present invention relates to a system and method for making MEM switches having a common ground plane. One method for making MEM switches includes: patterning a common ground plane layer on a substrate; forming a dielectric layer on the common ground plane layer; depositing a DC electrode region through the dielectric layer to contact the common ground plane layer; and depositing a conducting layer on the DC electrode region so that regions of the conducting layer contact the DC electrode region, so that the common ground plane layer provides a common ground for the regions of the conducting layer.

Inventors: Chou; Chia-Shing (Oak Park, CA)

Assignee: Wireless MEMs, Inc.

International Classification: H01L 21/20 (20060101)

Expiration Date: 9/05/02018