Patent Number: 7,101,726

Title: Solid-state imaging device and method of manufacturing solid-state imaging device background of the invention

Abstract: A solid state imaging device having a back-illuminated type structure in which a lens is formed on the back side of a silicon layer with a light-receiving sensor portion being formed thereon. Insulating layers are buried into the silicon layer around an image pickup region, with the insulating layer being buried around a contact layer that connects an electrode layer of a pad portion and an interconnection layer of the surface side. A method of manufacturing such a solid-state imaging device is also provided.

Inventors: Yamamoto; Yuichi (Kanagawa, JP), Iwamoto; Hayato (Kanagawa, JP)

Assignee: Sony Corporation

International Classification: H01L 21/00 (20060101)

Expiration Date: 9/05/02018