Patent Number: 7,101,747

Title: Dual work function metal gates and methods of forming

Abstract: Complementary transistors and methods of forming the complementary transistors on a semiconductor assembly are described. The transistors can be formed from a metal silicon compound deficient of silicon bonding atoms on a dielectric material overlying a semiconductor substrate conductively doped for PMOS and NMOS regions. The metal silicon compound overlying the NMOS region is converted to a metal silicon nitride and the metal silicon compound overlying the PMOS region is converted to a metal silicide. NMOS transistor gate electrodes comprising metal silicon nitride and PMOS transistor gate electrodes comprising metal silicide can be formed.

Inventors: Hu; Yongjun J. (Boise, ID)

Assignee: Micron Technology, Inc.

International Classification: H01L 21/8238 (20060101)

Expiration Date: 9/05/02018