Patent Number: 7,101,779

Title: Method of forming barrier layers

Abstract: Mixed metal aluminum nitride and boride diffusion barriers and electrodes for integrated circuits, particularly for DRAM cell capacitors. Also provided are methods for CVD deposition of M.sub.xAl.sub.yN.sub.zB.sub.w alloy diffusion barriers, wherein M is Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, or W; x is greater than zero; y is greater than or equal to zero; the sum of z and w is greater than zero; and wherein when y is zero, z and w are both greater than zero.

Inventors: Vaartstra; Brian A. (Nampa, ID), Westmoreland; Donald L. (Boise, ID)

Assignee: Micron, Technology, Inc.

International Classification: H01L 21/44 (20060101)

Expiration Date: 9/05/02018