Patent Number: 7,101,790

Title: Method of forming a robust copper interconnect by dilute metal doping

Abstract: A copper filled semiconductor feature and method of forming the same having improved bulk properties the method including providing a semiconductor process wafer having a process surface including an opening for forming a semiconductor feature; depositing at least one metal dopant containing layer over the opening to form a thermally diffusive relationship to a subsequently deposited copper layer; depositing said copper layer to substantially fill the opening; and, thermally treating the semiconductor process wafer for a time period sufficient to distribute at least a portion of the metal dopants to collect along at least a portion of the periphery of said copper layer including a portion of said copper layer grain boundaries.

Inventors: Lee; Hsien-Ming (Changhua, TW), Su; Hung-Wen (Jabei, TW)

Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.

International Classification: H01L 21/44 (20060101)

Expiration Date: 9/05/02018