Patent Number: 7,101,811

Title: Method for forming a dielectric layer and related devices

Abstract: A dielectric layer may be formed by depositing the dielectric layer to an intermediate thickness and applying a nitridation process to the dielectric layer of intermediate thickness. The dielectric layer may then be deposited to the final, desired thickness.

Inventors: Kuse; Ronald John (Tsukuba, JP), Yasuda; Tetsuji (Tsukuba, JP)

Assignee: Intel Corporation

International Classification: H01L 21/31 (20060101)

Expiration Date: 9/05/02018