Patent Number: 7,101,813

Title: Atomic layer deposited Zr-Sn-Ti-O films

Abstract: A dielectric film containing atomic layer deposited Zr--Sn--Ti--O and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO.sub.2. Depositing titanium and oxygen onto a substrate surface by atomic layer deposition, depositing zirconium and oxygen onto a substrate surface by atomic layer deposition, and depositing tin and oxygen onto a substrate surface by atomic layer deposition form the Zr--Sn--Ti--O dielectric layer. Dielectric films containing atomic layer deposited Zr--Sn--Ti--O are thermodynamically stable such that the Zr--Sn--Ti--O will have minimal reactions with a silicon substrate or other structures during processing.

Inventors: Ahn; Kie Y. (Chappaqua, NY), Forbes; Leonard (Corvallis, OR)

Assignee: Micron Technology Inc.

International Classification: H01L 21/31 (20060101)

Expiration Date: 9/05/02018