Patent Number: 7,101,815

Title: Method for improving thickness uniformity of deposited ozone-TEOS silicate glass layers

Abstract: A method for depositing highly conformal silicate glass layers via chemical vapor deposition through the reaction of TEOS and O.sub.3 is provided, comprising placing an in-process semiconductor wafer having multiple surface constituents in a plasma-enhanced chemical vapor deposition chamber.

Inventors: Iyer; Ravi (Boise, ID)

Assignee: Micron Technology, Inc.

International Classification: C23C 16/40 (20060101)

Expiration Date: 9/05/02018