Patent Number: 7,102,151

Title: Small electrode for a chalcogenide switching device and method for fabricating same

Abstract: A memory cell and a method of fabricating the memory cell having a small active area. By forming a spacer in a window that is sized at the photolithographic limit, a pore may be formed in dielectric layer which is smaller than the photolithographic limit. Electrode material is deposited into the pore, and a layer of structure changing material, such as chalcogenide, is deposited onto the lower electrode, thus creating a memory element having an extremely small and reproducible active area.

Inventors: Reinberg; Alan R. (Boise, ID), Zahorik, legal representative; Renee (Boise, ID), Zahorik, deceased; Russell C. (Boise, ID)

Assignee: Micron Technology, Inc.

International Classification: H01L 47/00 (20060101)

Expiration Date: 9/05/02018