Patent Number: 7,102,164

Title: Semiconductor device having a conductive layer with a light shielding part

Abstract: A semiconductor device having a substrate: a semiconductor film having at least two impurity regions, and at least one channel forming region; a gate insulating film; a gate electrode; an interlayer insulating film having an organic resin; a first conductive layer connected with one of the at least two impurity regions of the semiconductor film, where the first conductive layer has a light shielding part overlapping with at least the channel forming region; a pixel electrode; and a second conductive layer electrically connected with the other one of the at least two impurity regions, where the first and second conductive avers and the pixel electrode are provided on a same surface over the interlayer insulating film and the pixel electrode is electrically connected to the other one of the two impurity regions through the second conductive layer.

Inventors: Zhang; Hongyong (Yamato, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

International Classification: H01L 29/04 (20060101)

Expiration Date: 9/05/02018