Patent Number: 7,102,268

Title: Micromachine and method of fabricating the same

Abstract: A micromachine successfully reduced in parasitic capacity between input and output electrodes, and having an oscillator configured as ensuring a high S/N ratio under operation at higher frequencies is disclosed. The micromachine comprises an insulating layer formed on a substrate; a first electrode for signal input formed on the insulating layer; a second electrode for signal output formed on the insulating layer; and an oscillator electrode formed as being opposed with the first electrode and the second electrode and as being spaced therefrom by an air gap, wherein the insulating layer has a groove formed therein at least between the first electrode and the second electrode.

Inventors: Matsuhisa; Kazuhiro (Kanagawa, JP)

Assignee: Sony Corporation

International Classification: H02N 1/00 (20060101)

Expiration Date: 9/05/02018