Patent Number: 7,102,718

Title: Liquid crystal display device with particular TFT structure and method of manufacturing the same

Abstract: In a liquid crystal display device of an IPS system, to realize reduction of manufacturing cost and improvement of yield by decreasing the number of steps for manufacturing a TFT. The present invention adopts a channel etch type bottom gate TFT structure, and is characterized in that patterning of a source region 119 and a drain region 120 and patterning of a source wiring 121 and a pixel electrode 122 are carried out by the same photomask.

Inventors: Yamazaki; Shunpei (Tokyo, JP), Hirakata; Yoshiharu (Kanagawa, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

International Classification: G02F 1/1343 (20060101)

Expiration Date: 9/05/02018