Patent Number: 7,102,807

Title: High-speed electro-absorption modulator with low drive voltage

Abstract: The present invention is an electro-absorption modulator with a p-i-n-i-n epitaxy layer whose structure is p-i(MQW)-n.sup.+-i(collector)-n to release the trade-off between the operation voltage and the speed, to increase the confinement factor of the light in the un-doped layers, and to reduce the insertion loss caused by the free-carrier absorption in the doped layers, wherein MQW stands for Multiple-Quantum Well.

Inventors: Shi; Jin-Wei (Taipei, TW), Hsieh; Chen-An (Jhongli, TW)

Assignee: National Central University

International Classification: G02F 1/03 (20060101)

Expiration Date: 9/05/02018