Patent Number: 7,102,919

Title: Methods and devices for determining writing current for memory cells

Abstract: Methods for determining writing current for memory cells. A first reference current is applied to a first operative line to switch the memory cell to a first state. A second reference current is applied to a second operative line crossing the first operative line to switch the memory cell to a second state. A first writing current is obtained according to a first ratio and the first reference current. A second writing current is obtained according to a second ratio and the second reference current. The memory cell is programmed by applying the first writing current to the first operative line and applying the second writing current to the second operative line.

Inventors: Sung; Hung-Cheng (Baoshan, Hsinchu, TW), Shyu; Der-Shin (Hsinchu, TW)

Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.

International Classification: G11C 11/00 (20060101)

Expiration Date: 9/05/02018