Patent Number: 7,102,922

Title: Thin film magnetic memory device capable of conducting stable data read and write operations

Abstract: A tunnel magnetic resistive element forming a magnetic memory cell includes a fixed magnetic layer having a fixed magnetic field of a fixed direction, a free magnetic layer magnetized by an applied magnetic field, and a tunnel barrier that is an insulator film provided between the fixed and free magnetic layers in a tunnel junction region. In the free magnetic layer, a region corresponding to an easy axis region having characteristics desirable as a memory cell is used as the tunnel junction region. A hard axis region having characteristics undesirable as a memory cell is not used as a portion of the tunnel magnetic resistive element.

Inventors: Hidaka; Hideto (Hyogo, JP)

Assignee: Renesas Technology Corp.

International Classification: G11C 11/14 (20060101); G11C 11/00 (20060101); G11C 11/15 (20060101); G11C 7/02 (20060101); G11C 7/06 (20060101)

Expiration Date: 9/05/02018