Patent Number: 7,102,923

Title: High output nonvolatile magnetic memory

Abstract: A magnetic memory is provided with a high-output memory cell capable of switching and magnetization reversal operations by means of two terminals. There is formed an MIS junction laminated layer comprising a diode, a spin transfer torque magnetization reversal induction layer, and a tunnel magnetoresistive device. A bit line and a word line are connected to the laminated layer.

Inventors: Hayakawa; Jun (Sendai, JP)

Assignee: Hitachi, Ltd.

International Classification: G11C 11/15 (20060101)

Expiration Date: 9/05/02018