Patent Number: 7,102,952

Title: Method and apparatus for increasing data read speed in a semiconductor memory device

Abstract: A semiconductor memory device having a data read path maintains a higher power voltage supplied to an input/output sense amplifier in the input/output path, through which data passes during a data read operation, than the voltage supplied to other circuit components in the data read path, thereby achieving a high data read speed.

Inventors: Lee; Chan-Yong (Suwon-si, KR), Lee; Jung-Hwa (Suwon-si, KR)

Assignee: Samsung Electronics Co., Ltd.

International Classification: G11C 5/14 (20060101)

Expiration Date: 9/05/02018