Patent Number: 7,103,443

Title: Directed gas injection apparatus for semiconductor processing

Abstract: A method and system for utilizing a gas injection plate comprising a number of shaped orifices (e.g., sonic and simple orifices, and divergent nozzles) in the gas inject system as part of a plasma processing system. By utilizing the shaped orifices, directionality of gas flow can be improved. This improvement is especially beneficial in high aspect ratio processing.

Inventors: Strang; Eric J. (Chandler, AZ)

Assignee: Tokyo Electron Limited

International Classification: G06F 19/00 (20060101)

Expiration Date: 9/05/02018