Patent Number: 7,132,329

Title: Source side injection storage device with spacer gates and method therefor

Abstract: A storage device structure (10) has two bits of storage per control gate (34) and uses source side injection (SSI) to provide lower programming current. A control gate (34) overlies a drain electrode formed by a doped region (22) that is positioned in a semiconductor substrate (12). Two select gates (49 and 50) are implemented with conductive sidewall spacers adjacent to and lateral to the control gate (34). A source doped region (60) is positioned in the semiconductor substrate (12) adjacent to one of the select gates for providing a source of electrons to be injected into a storage layer (42) underlying the control gate. Lower programming results from the SSI method of programming and a compact memory cell size exists.

Inventors: Hong; Cheong M. (Austin, TX), Chindalore; Gowrishankar L. (Austin, TX)

Assignee: Freescale Semiconductor, Inc.

International Classification: H01L 21/336 (20060101)

Expiration Date: 2019-11-07 0:00:00