Patent Number: 7,132,351

Title: Method of fabricating a compound semiconductor layer

Abstract: A method of fabricating a compound semiconductor layer has steps of forming a first layer made of an oxidizable material on a substrate, forming a second layer made of a compound semiconductor on the first layer, oxidizing the first layer made of the oxidizable material to an oxide layer and forming a third layer made of compound semiconductor that constitutes a semiconductor element on the second layer.

Inventors: Sai; Hironobu (Kyoto, JP)

Assignee: Rohm Co., Ltd.

International Classification: H01L 21/36 (20060101); H01L 21/20 (20060101)

Expiration Date: 2019-11-07 0:00:00