Patent Number: 7,132,372

Title: Method for preparing a semiconductor substrate surface for semiconductor device fabrication

Abstract: A method for preparing a semiconductor substrate surface (28) for semiconductor device fabrication, includes providing a semiconductor substrate (20) having a pure Ge surface layer (28) or a Ge-containing surface layer (12), such as SiGe. The semiconductor substrate (20) is cleaned using a first oxygen plasma process (14) to remove foreign matter (30) from the surface (28) of the substrate (20). The substrate surface (28) is next immersed in a hydrochloric acid solution (16) to remove additional foreign matter (30) from the surface (28) of the substrate (20). The immersion step is followed by a second oxygen plasma etch process (18), passivate the surface with a passivation layer (34), and provide for an atomically smooth surface for subsequent epitaxial or gate dielectric growth.

Inventors: Smith; Steven M. (Gilbert, AZ), Convey; Diana J. (Laveen, AZ), Hooper; Andy E. (Phoenix, AZ), Wei; Yi (Chandler, AZ)

Assignee: Freescale Semiconductor, Inc.

International Classification: H01L 21/31 (20060101)

Expiration Date: 2019-11-07 0:00:00