Patent Number: 7,132,707

Title: Magnetic random access memory array with proximate read and write lines cladded with magnetic material

Abstract: An MTJ MRAM cell is formed above or below an intersection of vertically separated, magnetically clad, ultra-thin orthogonal word and bit lines whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. The word and bit lines also include a soft magnetic layer of high permeability formed on their surfaces distal from the cell to improve the magnetic field still further. The fabrication of a cell with such thin lines is actually simplified as a result of the thinner depositions and eliminates the necessity of removing material by CMP during patterning and polishing, thereby producing uniform spacing between the lines and the cell free layer.

Inventors: Min; Tai (San Jose, CA), Guo; Yimin (San Jose, CA), Wang; Pokang (San Jose, CA)

Assignee: Headway Technologies, Inc.

International Classification: H01L 29/76 (20060101); H01L 23/552 (20060101); H01L 27/20 (20060101); H01L 29/82 (20060101)

Expiration Date: 2019-11-07 0:00:00