Patent Number: 7,132,728

Title: Non-volatile memory devices including fuse covered field regions

Abstract: A non-volatile device includes a semiconductor substrate having a fuse window region. At least one fuse crosses the fuse window region. Field regions are arranged outside of the fuse window region and arranged under end portions of the at least one fuse. An isolation layer is configured to isolate the field regions. A fuse insulating layer is interposed between the at least one fuse and the field regions.

Inventors: Sel; Jong-Sun (Seoul, KR), Chang; Sung-Nam (Seoul, KR), Kang; Dae-Woong (Seoul, KR), Park; Bong-Tae (Seoul, KR)

Assignee: Samsung Electronics Co., Ltd.

International Classification: H01L 29/00 (20060101)

Expiration Date: 2019-11-07 0:00:00