Patent Number: 7,132,743

Title: Integrated circuit package substrate having a thin film capacitor structure

Abstract: This invention relates to the manufacture of a substrate, such as a package substrate or an interposer substrate, of an integrated circuit package. A base structure is formed from a green material having a plurality of via openings therein. The green material is then sintered so that the green material becomes a sintered ceramic material and the base structure becomes a sintered ceramic base structure having the via openings. A conductive via is formed in each via opening of the sintered ceramic base structure. A capacitor structure is formed on the sintered ceramic base structure. The power and ground planes of the capacitor structure are connected to the vias. As such, a capacitor structure can be formed and connected to the vias without the need to drill vias openings in brittle substrates such as silicon substrates. The sintered ceramic material also has a low coefficient of thermal expansion and can resist high temperature processing conditions when manufacturing the capacitor structure, and is inexpensive to manufacture.

Inventors: Palanduz; Cengiz A. (Chandler, AZ)

Assignee: Intel Corporation

International Classification: H01L 23/06 (20060101)

Expiration Date: 2019-11-07 0:00:00