Patent Number: 7,132,751

Title: Memory cell using silicon carbide

Abstract: A memory includes an insulating layer; a plurality of spaced-apart semiconductor lines formed on the insulating layer; and a plurality of spaced-apart conductive gate lines formed on the insulating layer. Each of the gate lines is disposed to intersect the plurality of semiconductor lines at a plurality of intersections. The semiconductor lines include a plurality of body regions disposed at the intersections, with each of the body regions including a channel formed from a silicon carbide material.

Inventors: Chang; Peter L. D. (Portland, OR)

Assignee: Intel Corporation

International Classification: H01L 23/48 (20060101); H01L 23/52 (20060101); H01L 27/10 (20060101); H01L 29/40 (20060101); H01L 29/739 (20060101)

Expiration Date: 2019-11-07 0:00:00