Patent Number: 7,132,756

Title: Semiconductor device and method for manufacturing the same

Abstract: A semiconductor device (1) of the present invention includes a semiconductor element (103) including electrode parts (104), and a wiring substrate (108) including an insulation layer (101), electrode-part-connection electrodes (102) provided in the insulation layer (101), and external electrodes (107) that is provided in the insulation layer (101) and that is connected electrically with the electrode-part-connection electrodes (102), in which the electrode parts (104) and the electrode-part-connection electrodes (102) are connected electrically with each other. The insulation layer (101) has an elastic modulus measured according to JIS K6911 of not less than 0.1 GP a and not more than 5 GPa, and the electrodes (104) and the electrode-part-connection electrodes (102) are connected by metal joint.

Inventors: Sugaya; Yasuhiro (Toyonaka, JP), Asahi; Toshiyuki (Osaka, JP), Komatsu; Shingo (Kadoma, JP), Yamamoto; Yoshiyuki (Neyagawa, JP), Nakatani; Seiichi (Hirakata, JP)

Assignee: Matsushita Electric Industrial Co., Ltd.

International Classification: H01L 23/48 (20060101)

Expiration Date: 2019-11-07 0:00:00