Patent Number: 7,232,362

Title: Chemical mechanical polishing process for manufacturing semiconductor devices

Abstract: A chemical-mechanical polishing (CMP) process for the manufacturing of semiconductor devices is disclosed. The process includes removing a first portion of a first layer of interconnect materials using a first platen and a first slurry, removing a second portion of the first layer using a second platen and a second slurry, removing a first portion of a second layer of the interconnect materials using a second platen and a third slurry, and removing a second portion of the second layer using a third platen and a fourth slurry.

Inventors: Chiou; Wen-Chih (Miaoli, TW), Chen; Ying-Ho (Taipei, TW), Yu; Chen-Hua (Hsin-Chu, TW)

Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.

International Classification: B24B 1/00 (20060101)

Expiration Date: 2019-06-19 0:00:00