Patent Number: 7,355,885

Title: Semiconductor memory device with magnetoresistance elements and method of writing date into the same

Abstract: A semiconductor memory device includes memory cells, first wirings, a first current driver circuit, and a second current driver circuit. The memory cell includes a magneto-resistive element having a first ferromagnetic film, an insulating film formed on the first ferromagnetic film, and a second ferromagnetic film formed on the insulating film. The first wiring is provided in close proximity to and insulated from the magneto-resistive element. The first current driver circuit supplies a first current to the first wiring in a write operation to produce a magnetic field around the magneto-resistive elements. The second current driver circuit supplies a second current between the first and second ferromagnetic films via the insulating film in a write and a read operation.

Inventors: Fukuzumi; Yoshiaki (Yokohama, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: G11C 11/00 (20060101)

Expiration Date: 2020-04-08 0:00:00