Patent Number: 7,356,059

Title: Nitride semiconductor laser device and semiconductor optical device

Abstract: A drive current is generated by mixing a pulse signal from a pulse generator and a DC current from a DC current power supply using a T circuit and injected into a nitride semiconductor laser having a horizontal light-confinement ridge structure. The horizontal light-confinement coefficient of the nitride semiconductor laser is between 85% and 99%. The time when the current waveform of the drive current is continuously over the threshold current of the nitride semiconductor laser ranges from 5 nsec to 1,000 nsec.

Inventors: Yamasaki; Yukio (Daito, JP), Ito; Shigetoshi (Ikoma, JP)

Assignee: Sharp Kabushiki Kaisha

International Classification: H01S 3/00 (20060101); H01S 3/097 (20060101); H01S 5/00 (20060101)

Expiration Date: 2020-04-08 0:00:00