Patent Number: 7,356,060

Title: Semiconductor laser device and method for fabricating the same

Abstract: A semiconductor laser device includes a MQW active layer, a p-type cladding layer formed on the MQW active layer, having a ridge portion and having a smaller refractive index than that of the MQW active layer, a plurality of dielectric films formed at least on part of the p-type cladding layer extending from each side of the ridge portion.

Inventors: Mochida; Atsunori (Osaka, JP)

Assignee: Matsushita Electric Industrial Co., Ltd.

International Classification: H01S 5/00 (20060101)

Expiration Date: 2020-04-08 0:00:00