Patent Number: 7,422,020

Title: Aluminum incorporation in porous dielectric for improved mechanical properties of patterned dielectric

Abstract: A porous dielectric layer is formed on a substrate. Aluminum is incorporated in the porous dielectric layer with a pattern process using an Aluminum gas precursor. The incorporated Aluminum improves the mechanical properties of the porous dielectric layer.

Inventors: Ramachandrarao; Vijayakumar (Portland, OR), Kloster; Grant (Lake Oswego, OR)

Assignee: Intel Corporation

International Classification: B08B 6/00 (20060101); H01L 21/302 (20060101)

Expiration Date: 2020-09-09 0:00:00