Patent Number:
7,422,020
Title:
Aluminum incorporation in porous dielectric for improved mechanical properties of patterned dielectric
Abstract:
A porous dielectric layer is formed on a substrate. Aluminum is incorporated in the porous dielectric layer with a pattern process using an Aluminum gas precursor. The incorporated Aluminum improves the mechanical properties of the porous dielectric layer.
Inventors:
Ramachandrarao; Vijayakumar (Portland, OR), Kloster; Grant (Lake Oswego, OR)
Assignee:
Intel Corporation
International Classification:
B08B 6/00 (20060101); H01L 21/302 (20060101)
Expiration Date:
2020-09-09 0:00:00