Patent Number: 7,465,952

Title: Programmable non-volatile resistance switching device

Abstract: A memory element comprises a first number of electrodes and a second number of electrically conducting channels between sub-groups of two of said electrodes, the channels exhibiting an electrical resistance that is reversibly switchable between different states, wherein the first number is larger than two and the second number is larger than the first number divided by two. The electrically conducting channels may be provided in transition metal oxide material, which exhibits a reversibly switchable resistance that is attributed to a switching phenomenon at the interfaces between the electrodes and the transition metal oxide material.

Inventors: Alvarado; Santos F. (Rueschlikon, CH), Bednorz; Johannes Georg (Wolfhusen, CH), Meijer; Gerhard Ingmar (Zurich, CH)

Assignee: International Business Machines Corporation

International Classification: H01L 47/00 (20060101); G11C 11/00 (20060101); H01L 29/06 (20060101)

Expiration Date: 2021-12-16 0:00:00