Patent Number: 7,465,980

Title: Ferroelectric memory, multivalent data recording method and multivalent data reading method

Abstract: A ferroelectric memory device includes a gate electrode formed on a semiconductor body via a ferroelectric film, first and second diffusion regions being formed in the semiconductor body at respective sides of a channel region, wherein the ferroelectric film comprises a first region located in the vicinity of the first diffusion region, a second region located in the vicinity of the second diffusion region, and a third region located between the first and second regions, wherein the first, second and third regions carry respective, mutually independent polarizations.

Inventors: Arimoto; Yoshihiro (Kawasaki, JP), Ishihara; Hiroshi (Tokyo, JP), Tamura; Tetsuro (Kawasaki, JP), Hoko; Hiromasa (Kawasaki, JP), Aizawa; Koji (Tokyo, JP), Tabuchi; Yoshiaki (Tokyo, JP), Yamaguchi; Masaomi (Kawasaki, JP), Nara; Yasuo (Kawasaki, JP), Takahashi; Kazuhiro (Tokyo, JP), Hasegawa; Satoshi (Kanagawa, JP)

Assignee: Fujitsu Limited

International Classification: H01L 29/76 (20060101)

Expiration Date: 2021-12-16 0:00:00