Patent Number: 7,535,040

Title: Insulated gate semiconductor device and method for manufacturing same

Abstract: In an insulated gate semiconductor device (1) having an N.sup.- type base region (11), P.sup.+ type collector regions (12), P type base regions (13), and N.sup.+ type emitter regions (14), an N.sup.+ type collector-short region (15) which extends toward the N.sup.- type base region (11) farther than the P.sup.+ type collector regions (12) is formed in the lower surface of the N.sup.- type base region (11), and a P.sup.+ type semiconductor region (16) is formed between the N.sup.+ type collector-short region (15) and the N.sup.- type base region (11).

Inventors: Yoshinobu; Kono (Niiza, JP)

Assignee: Sanken Electric Co. Ltd.

International Classification: H01L 29/80 (20060101)

Expiration Date: 2021-05-19 0:00:00