Patent Number: 7,535,079

Title: Semiconductor device comprising passive components

Abstract: A method of making a semiconductor device includes the steps of: providing a semiconductor substrate (110, 510, 1010, 1610) having a patterned interconnect layer (120, 520, 1020, 1620) formed thereon; depositing a first dielectric material (130, 530, 1030, 1630) over the interconnect layer; depositing a first electrode material (140, 540, 1040, 1640) over the first dielectric material; depositing a second dielectric material (150, 550, 1050, 1650) over the first electrode material; depositing a second electrode material (160, 560, 1060, 1660) over the second dielectric material; patterning the second electrode material to form a top electrode (211, 611, 1111, 1611) of a first capacitor (210, 710, 1310, 1615); and patterning the first electrode material to form a top electrode (221, 721, 1221, 1621) of a second capacitor (220, 720, 1320, 1625), to form an electrode (212, 712, 1212, 1612) of the first capacitor, and to define a resistor (230, 730, 1330).

Inventors: Remmel; Thomas P. (Mesa, AZ), Kalpat; Sriram (Austin, TX), Miller; Melvy F. (Tempe, AZ), Zurcher; Peter (Phoenix, AZ)

Assignee: Freescale Semiconductor, Inc.

International Classification: H01L 29/00 (20060101)

Expiration Date: 2021-05-19 0:00:00