Patent Number: 7,535,750

Title: Asymmetrical random access memory cell, and a memory comprising asymmetrical memory cells

Abstract: Asymmetrical random access memory cell (1) including cross coupled inverters (2, 3) which are driven at their nodes (22, 32) by separate bit-lines (blt, blc) of a pair of complementary bit-lines, which are connected via a pass-transistor (21, 31), wherein the random access memory cell is asymmetrical by means of the cross coupled inverters (2, 3) which have asymmetrically physical behaviours whereby different switching thresholds of the inverters are present, and that the pass-transistors (21, 31) are driven by separate controlled wordlines (wl, wwl).

Inventors: Wagner; Otto (Altdorf, DE), Ehrenreich; Sebastian (Schoenau, DE), Mahnke; Torsten (Stuttgart, DE), Aipperspach; Anthony Gus (Rochester, MN)

Assignee: International Business Machines Corporation

International Classification: G11C 11/00 (20060101)

Expiration Date: 2021-05-19 0:00:00