Patent Number: 7,535,751

Title: Dual-port SRAM device

Abstract: A dual-port SRAM cell structure includes a first inverter area where a first inverter is constructed on a semiconductor substrate; a second inverter area where a second inverter is constructed on the semiconductor substrate, the first and second inverters being cross-coupled to form one or more data stage nodes for latching a value; and a first pass gate transistor area where a first write port pass gate transistor and a first read port pass gate transistor share a first oxide defined region for balancing device performances thereof. The first write port pass gate transistor and the first read port pass gate transistor are coupled to the data storage nodes for selectively reading or writing a value therefrom or thereinto.

Inventors: Huang; Huai-Ying (Jhonghe, TW), Hung; Forst (Hsinchu, TW), Chang; Feng-Ming (Chia-yi, TW)

Assignee: Taiwan Semioconductor Manufacturing Co., Ltd.

International Classification: G11C 11/00 (20060101); G11C 8/00 (20060101)

Expiration Date: 2021-05-19 0:00:00