Patent Number: 7,535,756

Title: Method to tighten set distribution for PCRAM

Abstract: A memory device including a memory cell comprising phase change material is described along with methods for programming the memory device. A method for programming disclosed herein includes applying an increasing first voltage across the memory cell and monitoring current in the memory cell to detect a beginning of a phase transition of the phase change material. Upon detection of the beginning of a phase transition of the phase change material, the method includes applying a second voltage across the memory cell that is a function of the level of the first voltage upon detection of the beginning of a phase transition of the phase change material.

Inventors: Lung; Hsiang-Lan (Elmsford, NY)

Assignee: Macronix International Co., Ltd.

International Classification: G11C 11/00 (20060101)

Expiration Date: 2021-05-19 0:00:00