Patent Number: 7,611,807

Title: Method for forming poly-silicon film

Abstract: In the present invention, a method is used for forming a poly-silicon film that uses sequential lateral solidification (SLS) with two laser irradiations using a mask for patterning the laser beam so as to increase the grain length. The method also achieves enhancing the throughput due to the use of a mask that is designed for the method.

Inventors: Chen; Hung-Tse (Hsinchu County, TW), Chen; Yu-Cheng (Taipei County, TW), Chu; Fang-Tsun (Taichung County, TW)

Assignee: Industrial Technology Research Institute

International Classification: G03F 1/00 (20060101)

Expiration Date: 1/03/02017