Patent Number: 7,611,825

Title: Photolithography method to prevent photoresist pattern collapse

Abstract: A method comprises forming a BARC layer on a substrate, treating the BARC layer to make its surface hydrophilic, forming a photoresist layer on the treated BARC layer, exposing the photoresist layer to a predetermined pattern, and developing the photoresist layer to form patterned photoresist.

Inventors: Chang; Ching-Yu (Yilang County, TW), Chen; Kuei Shun (Hsin-Chu, TW), Ho; Bang-Ching (Hsin-Chu, TW)

Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.

International Classification: G03F 7/00 (20060101)

Expiration Date: 1/03/02017