Patent Number: 7,611,916

Title: Method of manufacturing semiconductor optical element

Abstract: A method of manufacturing a semiconductor optical element, includes successively stacking a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type; applying a resist to the second semiconductor layer and patterning the resist into stripes by photolithography; forming recesses in the second semiconductor layer and a waveguide ridge adjacent to the recesses by dry-etching the second semiconductor layer only partially through the second semiconductor layer, using the resist as a mask; forming an insulating film on the waveguide ridge and in the recesses while leaving the resist; removing the insulating film from the resist so that the resist is exposed while the insulating film in the recess is left; removing the resist exposed; and forming an electrode on the waveguide ridge after removing the resist.

Inventors: Kusunoki; Masatsugu (Tokyo, JP), Oka; Takafumi (Tokyo, JP)

Assignee: Mitsubishi Electric Corporation

International Classification: H01L 21/00 (20060101)

Expiration Date: 1/03/02017