Patent Number: 7,611,937

Title: High performance transistors with hybrid crystal orientations

Abstract: A method of forming a semiconductor structure having a hybrid crystal orientation and forming MOSFETs having improved performance on the semiconductor structure is provided. The method includes providing a substrate comprising a buried oxide (BOX) on a first semiconductor layer, and a second semiconductor layer on the BOX, wherein the first and second semiconductor layers have a first and a second crystal orientation, respectively, and wherein the substrate comprises a first region and a second region. An isolation structure is formed in the second region extending to the first semiconductor layer. A trench is then formed in the isolation structure, exposing the first semiconductor layer. A semiconductor material is epitaxially grown in the trench. The method further includes forming a MOSFET of a first type on the second semiconductor layer and a MOSFET of an opposite type than the first type on the epitaxially grown semiconductor material.

Inventors: Lin; Chung-Te (Tainan, TW), Wu; I-Lu (Hsin-Chu, TW), Sadaka; Mariam (Austin, TX)

Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.

International Classification: H01L 21/336 (20060101); H01L 21/8234 (20060101)

Expiration Date: 1/03/02017