Patent Number: 7,611,972

Title: Semiconductor devices and methods of manufacture thereof

Abstract: Semiconductor devices and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of forming an insulating material layer. The method includes forming a barrier layer and forming a rare earth element-containing material layer over the barrier layer.

Inventors: Govindarajan; Shrinivas (Austin, TX)

Assignee: Qimonda North America Corp.

International Classification: H01L 21/322 (20060101); H01L 21/31 (20060101)

Expiration Date: 1/03/02017