Patent Number: 7,611,990

Title: Deposition methods for barrier and tungsten materials

Abstract: Embodiments as described herein provide a method for depositing barrier layers and tungsten materials on substrates. In one embodiment, a method for depositing materials is provided which includes forming a barrier layer on a substrate, wherein the barrier layer contains a cobalt silicide layer and a metallic cobalt layer, exposing the barrier layer to a soak gas containing a reducing gas during a soak process, and forming a tungsten material over the barrier layer. In one example, the barrier layer may be formed by depositing a cobalt-containing material on a dielectric surface of the substrate and annealing the substrate to form the cobalt silicide layer from a lower portion of the cobalt-containing material and the metallic cobalt layer from an upper portion of the cobalt-containing material.

Inventors: Yoon; Ki Hwan (Sunnyvale, CA), Cha; Yonghwa Chris (San Jose, CA), Yu; Sang Ho (Sunnyvale, CA), Ahmad; Hafiz Farooq (Newark, CA), Wee; Ho Sun (Santa Clara, CA)

Assignee: Applied Materials, Inc.

International Classification: H01L 21/00 (20060101)

Expiration Date: 1/03/02017