Patent Number: 7,612,360

Title: Non-volatile memory devices having cell diodes

Abstract: An integrated circuit memory cell includes a substrate having a first semiconductor region of first conductivity type (e.g., N-type) therein, which may define a portion of a word line within the substrate. An electrically insulating layer is provided on the substrate. The electrically insulating layer has an opening therein that extends opposite a recess in the first semiconductor region. A first insulating spacer is provided on a sidewall of the recess in the first semiconductor region. A diode is provided in the opening. The diode has a first terminal electrically coupled to a bottom of the recess in the first semiconductor region. A variable resistivity material region (e.g., phase-changeable material region) is also provided. The variable resistivity material region is electrically coupled to a second terminal of the diode.

Inventors: Lee; Kwang-woo (Jeollabuk-do, KR), Oh; Jae-hee (Gyeonggi-do, KR), Jeong; Chang-wook (Seoul, KR)

Assignee: Samsung Electronics Co., Ltd.

International Classification: H01L 29/04 (20060101)

Expiration Date: 1/03/02017