Patent Number: 7,612,362

Title: Nitride semiconductor light emitting device

Abstract: A nitride semiconductor light emitting device includes a substrate, and a first n-type nitride semiconductor layer, a light emitting layer, a first p-type nitride semiconductor layer, a second p-type nitride semiconductor layer, a p-type nitride semiconductor tunnel junction layer, an n-type nitride semiconductor tunnel junction layer and a second n-type nitride semiconductor layer that are formed on the substrate. The p-type nitride semiconductor tunnel junction layer and the n-type nitride semiconductor tunnel junction layer form a tunnel junction, and the p-type nitride semiconductor tunnel junction layer has an indium content ratio higher than that of the second p-type nitride semiconductor layer. At least one of the p-type nitride semiconductor tunnel junction layer and the n-type nitride semiconductor tunnel junction layer includes aluminum.

Inventors: Komada; Satoshi (Mihara, JP)

Assignee: Sharp Kabushiki Kaisha

International Classification: H01L 31/00 (20060101)

Expiration Date: 1/03/02017