Patent Number: 7,612,398

Title: Semiconductor storage device and method of manufacturing the same

Abstract: A semiconductor storage device wherein a plurality of ferroelectric capacitors are sufficiently covered with a hydrogen barrier film formed thereon comprises a field effect transistor formed on one surface side of a semiconductor substrate, a plurality of ferroelectric capacitors formed close to each other above the field effect transistor, an insulting film configured to cover the plurality of ferroelectric capacitors and planarised a space between adjacent ferroelectric capacitors in a self-aligned manner during formation thereof, and a hydrogen barrier film formed on the insulating film.

Inventors: Kumura; Yoshinori (Yokohama, JP), Shimojo; Yoshiro (Yokohama, JP), Kunishima; Iwao (Yokohama, JP), Ozaki; Tohru (Tokyo, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01L 21/02 (20060101)

Expiration Date: 1/03/02017