Patent Number: 7,612,412

Title: Semiconductor device and boost circuit

Abstract: A semiconductor device, includes: a field-effect transistor that configures a charge-pump circuit; and a supporting substrate that supports the field-effect transistor so that the field-effect transistor provided on the supporting substrate becomes warpable in a channel direction.

Inventors: Ajiki; Yoshiharu (Nagano-ken, JP)

Assignee: Seiko Epson Corporation

International Classification: H03K 17/73 (20060101)

Expiration Date: 1/03/02017